Motore di ricerca datesheet componenti elettronici |
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FQP10N20CF080 Reseller |
Reseller | Il numero della parte | Produttore elettronici | Spiegazioni elettronici | Price | Qty. BuyNow | |
DigiKey | FQP10N20C | Rochester Electronics LLC | POWER FIELD-EFFECT TRANSISTOR, 9 |
| 2,400 | |
FQP10N20C | onsemi | MOSFET N-CH 200V 9.5A TO220-3 | 0 | |||
FQP10N20CTSTU | onsemi | MOSFET N-CH 200V 9.5A TO220-3 | 0 | |||
Rochester Electronics | FQP10N20C | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 9.5A, 200V, 0.36ohm, N-Channel, MOSFET, TO-220AB RoHS : Compliant |
| 237,589 | |
FQP10N20CTSTU | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, N-Channel, MOSFET RoHS : Compliant |
| 797 | ||
FQP10N20C | onsemi | Power Field-Effect Transistor, 9.5A, 200V, 0.36ohm, N-Channel, MOSFET, TO-220AB RoHS : Compliant |
| 2,400 | ||
TME | FQP10N20C | onsemi | Transistor: N-MOSFET; unipolar; 200V; 6A; Idm: 38A; 72W; TO220AB |
| 0 | |
New Advantage Corporation | FQP10N20C | onsemi | N-Channel 200 V 0.36 Ohm Through Hole Mosfet - TO-220 RoHS : Compliant |
| 1,100 |
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